basic_circuit.h

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#ifndef __BASIC_CIRCUIT_H__
#define __BASIC_CIRCUIT_H__

#include "const.h"
///#include "cacti_interface.h"

using namespace std;

#define UNI_LEAK_STACK_FACTOR 0.43

int powers (int base, int n);
bool is_pow2(int64_t val);
uint32_t _log2(uint64_t num);
int factorial(int n, int m = 1);
int combination(int n, int m);

//#define DBG
#ifdef DBG
    #define PRINTDW(a);\
    a;
#else
    #define PRINTDW(a);\

#endif


enum Wire_placement {
    outside_mat,
    inside_mat,
    local_wires
};



enum Htree_type {
    Add_htree,
    Data_in_htree,
    Data_out_htree,
    Search_in_htree,
    Search_out_htree,
};

//CACTI3DD
enum Memorybus_type {
	Row_add_path,
	Col_add_path,
	Data_path
	/*in_network,
	out_network*/
};

/*enum Part_grain {
	Coarse_rank_level, //amsung 2009 3D DRAM
	Fine_rank_level, //Micron HMC 2011
	Coarse_bank_level, //ITRS fine TSV supported
	Fine_bank_level
};*/

enum Gate_type {
    nmos,
    pmos,
	inv,
    nand,
    nor,
    tri,
    tg
};

enum Half_net_topology {
    parallel,
    series
};

double logtwo (double x);

double gate_C(
    double width,
    double wirelength,
    bool _is_dram = false,
    bool _is_sram = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double gate_C_pass(
    double width,
    double wirelength,
    bool   _is_dram = false,
    bool   _is_sram = false,
    bool   _is_wl_tr = false,
    bool _is_sleep_tx = false);

double drain_C_(
    double width,
    int nchannel,
    int stack,
    int next_arg_thresh_folding_width_or_height_cell,
    double fold_dimension,
    bool _is_dram = false,
    bool _is_sram = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double tr_R_on(
    double width,
    int nchannel,
    int stack,
    bool _is_dram = false,
    bool _is_sram = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double R_to_w(
    double res,
    int nchannel,
    bool _is_dram = false,
    bool _is_sram = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double horowitz (
    double inputramptime,
    double tf,
    double vs1,
    double vs2,
    int rise);

double pmos_to_nmos_sz_ratio(
    bool _is_dram = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double simplified_nmos_leakage(
    double nwidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double simplified_pmos_leakage(
    double pwidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double simplified_nmos_Isat(
    double nwidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double simplified_pmos_Isat(
    double pwidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double cmos_Ileak(
    double nWidth,
    double pWidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false);

double cmos_Ig_n(
    double nWidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr= false,
    bool _is_sleep_tx = false);

double cmos_Ig_p(
    double pWidth,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr= false,
    bool _is_sleep_tx = false);


double cmos_Isub_leakage(
    double nWidth,
    double pWidth,
    int    fanin,
    enum Gate_type g_type,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false,
    enum Half_net_topology topo = series);

double cmos_Ig_leakage(
    double nWidth,
    double pWidth,
    int    fanin,
    enum Gate_type g_type,
    bool _is_dram = false,
    bool _is_cell = false,
    bool _is_wl_tr = false,
    bool _is_sleep_tx = false,
    enum Half_net_topology topo = series);

double shortcircuit(
    double vt,
    double velocity_index,
    double c_in,
    double c_out,
    double w_nmos,
    double w_pmos,
    double i_on_n,
    double i_on_p,
    double i_on_n_in,
    double i_on_p_in,
    double vdd);

double shortcircuit_simple(
    double vt,
    double velocity_index,
    double c_in,
    double c_out,
    double w_nmos,
    double w_pmos,
    double i_on_n,
    double i_on_p,
    double i_on_n_in,
    double i_on_p_in,
    double vdd);
//set power point product mask; strictly speaking this is not real point product
inline void set_pppm(
	double * pppv,
	double a=1,
    double b=1,
    double c=1,
    double d=1
    ){
		pppv[0]= a;
		pppv[1]= b;
		pppv[2]= c;
		pppv[3]= d;

}

inline void set_sppm(
	double * sppv,
	double a=1,
    double b=1,
    double c=1,
    double d=1
    ){
		sppv[0]= a;
		sppv[1]= b;
		sppv[2]= c;
}

//ali 
double wire_resistance(double resistivity, double wire_width, double wire_thickness,
    double barrier_thickness, double dishing_thickness, double alpha_scatter);
   
double wire_capacitance(double wire_width, double wire_thickness, double wire_spacing,
    double ild_thickness, double miller_value, double horiz_dielectric_constant,
    double vert_dielectric_constant, double fringe_cap);    

double tsv_resistance(double resistivity, double tsv_len, double tsv_diam, double tsv_contact_resistance);

double tsv_capacitance(double tsv_len, double tsv_diam, double tsv_pitch, double dielec_thickness, double liner_dielectric_constant, double depletion_width);

double tsv_area(double tsv_pitch);
// end ali

#endif